Supplier Device Package :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCP22N60N-F102
Per Unit
$2.04
RFQ
78,780
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 22A TO220-3 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220 205W (Tc) N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V
FCP22N60N
Per Unit
$3.31
RFQ
13,460
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 22A TO-220 SupreMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 205W (Tc) N-Channel - 600V 22A (Tc) 165 mOhm @ 11A, 10V 4V @ 250µA 45nC @ 10V 1950pF @ 100V 10V ±45V
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