Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP11NM60A
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RFQ
35,260
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STMicroelectronics MOSFET N-CH 600V 11A TO-220 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 110W (Tc) N-Channel - 600V 11A (Tc) 450 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1211pF @ 25V 10V ±30V
STP11NM60FD
Per Unit
$1.26
RFQ
14,420
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STMicroelectronics MOSFET N-CH 600V 11A TO-220 FDmesh™ Active Tube MOSFET (Metal Oxide) - Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 600V 11A (Tc) 450 mOhm @ 5.5A, 10V 5V @ 250µA 40nC @ 10V 900pF @ 25V 10V ±30V
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