Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCP20N60_F080
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RFQ
46,160
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ON Semiconductor MOSFET N-CH 600V 20A TO-220 SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCP20N60_G
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RFQ
18,740
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ON Semiconductor INTEGRATED CIRCUIT SuperFET™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCP20N60
Per Unit
$3.77
RFQ
78,980
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ON Semiconductor MOSFET N-CH 600V 20A TO-220 SuperFET™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 208W (Tc) N-Channel - 600V 20A (Tc) 190 mOhm @ 10A, 10V 5V @ 250µA 98nC @ 10V 3080pF @ 25V 10V ±30V
FCP190N60E
Per Unit
$1.58
RFQ
26,880
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ON Semiconductor MOSFET N-CH 600V TO220-3 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 208W (Tc) N-Channel - 600V 20.6A (Tc) 190 mOhm @ 10A, 10V 3.5V @ 250µA 82nC @ 10V 3175pF @ 25V 10V ±20V
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