- Series :
- Part Status :
- Packaging :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
48,320
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 10A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 250W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | 10V | ±30V | ||
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GET PRICE |
64,620
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|
Global Power Technologies Group | MOSFET N-CH 600V 10A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 198W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4V @ 250µA | 36nC @ 10V | 1891pF @ 25V | 10V | ±30V | ||
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GET PRICE |
32,880
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220AB | 125W (Tc) | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | ||
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56,200
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CHANNEL 600V 10A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 250W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | 10V | ±30V | |||
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52,740
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|
Diodes Incorporated | MOSFET N-CH 600V 12A TO220AB | Automotive, AEC-Q101 | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | 178W (Tc) | N-Channel | - | 600V | 12A (Tc) | 750 mOhm @ 5A, 10V | 4V @ 250µA | 35nC @ 10V | 1587pF @ 16V | 10V | ±30V | |||
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48,840
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 10A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 250W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4.5V @ 250µA | 40nC @ 10V | 1600pF @ 25V | 10V | ±30V | |||
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27,820
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|
ON Semiconductor | MOSFET N-CH 600V 10A TO-220 | UniFET-II™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 185W (Tc) | N-Channel | - | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | 1475pF @ 25V | 10V | ±25V |
