Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FCP104N60F
Per Unit
$3.96
RFQ
79,200
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V TO-220 HiPerFET™, Polar™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 5V @ 250µA 145nC @ 10V 6130pF @ 25V 10V ±20V
FCP104N60
Per Unit
$3.36
RFQ
68,720
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 37A TO-220 SuperFET® II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 357W (Tc) N-Channel - 600V 37A (Tc) 104 mOhm @ 18.5A, 10V 3.5V @ 250µA 82nC @ 10V 4165pF @ 380V 10V ±20V
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