Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP30NM60ND
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RFQ
74,080
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STMicroelectronics MOSFET N-CH 600V 25A TO-220 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 5V @ 250µA 100nC @ 10V 2800pF @ 50V 10V ±25V
STP30NM60N
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RFQ
67,840
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 25A TO-220 MDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 190W (Tc) N-Channel - 600V 25A (Tc) 130 mOhm @ 12.5A, 10V 4V @ 250µA 91nC @ 10V 2700pF @ 50V 10V ±30V
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