Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPP11N60CFDHKSA1
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RFQ
27,940
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Infineon Technologies MOSFET N-CH 600V 11A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel 600V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 500µA 64nC @ 10V 1200pF @ 25V 10V ±20V
APT12F60K
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RFQ
29,200
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Microsemi Corporation MOSFET N-CH 600V 12A TO-220 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel 600V 12A (Tc) 620 mOhm @ 6A, 10V 5V @ 500µA 55nC @ 10V 2200pF @ 25V 10V ±30V
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