- Series :
- Part Status :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
4 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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19,920
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|
Global Power Technologies Group | MOSFET N-CH 600V 4A TO220 | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 86.2W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | ||
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35,580
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 2.5A TO-220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | 83W (Tc) | N-Channel | - | 600V | 2.5A (Tc) | 3.5 Ohm @ 1.25A, 10V | 4.5V @ 250µA | 12nC @ 10V | 370pF @ 25V | 10V | ±30V | ||
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59,900
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|
Infineon Technologies | MOSFET N-CH 600V 7.3A TO220 | CoolMOS™ P6 | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | 63W (Tc) | N-Channel | - | 600V | 7.3A (Tc) | 600 mOhm @ 2.4A, 10V | 4.5V @ 200µA | 12nC @ 10V | 557pF @ 100V | 10V | ±20V | |||
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37,440
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|
ON Semiconductor | MOSFET N-CH 600V 2A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | 54W (Tc) | N-Channel | - | 600V | 2A (Tc) | 4.7 Ohm @ 1A, 10V | 4V @ 250µA | 12nC @ 10V | 235pF @ 25V | 10V | ±30V |
