4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
AOT20C60PL
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RFQ
56,120
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Alpha & Omega Semiconductor Inc. MOSFET N-CH - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 463W (Tc) N-Channel - 600V 20A (Tc) 260 mOhm @ 10A, 10V 5V @ 250µA 80nC @ 10V 3607pF @ 100V 10V ±30V
IPP60R099CPAAKSA1
Per Unit
$2.42
RFQ
15,840
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Infineon Technologies MOSFET N-CH 600V 31A TO-220 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO-220-3 255W (Tc) N-Channel - 600V 31A (Tc) 105 mOhm @ 18A, 10V 3.5V @ 1.2mA 80nC @ 10V 2800pF @ 100V 10V ±20V
STP34NM60N
Per Unit
$4.12
RFQ
21,140
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STMicroelectronics MOSFET N-CH 600V 29A TO-220 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 250W (Tc) N-Channel - 600V 29A (Tc) 105 mOhm @ 14.5A, 10V 4V @ 250µA 80nC @ 10V 2722pF @ 100V 10V ±25V
STP25NM60ND
Per Unit
$4.15
RFQ
59,900
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STMicroelectronics MOSFET N-CH 600V 21A TO-220 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 160W (Tc) N-Channel - 600V 21A (Tc) 160 mOhm @ 10.5A, 10V 5V @ 250µA 80nC @ 10V 2400pF @ 50V 10V ±25V
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