Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GP1M012A060H
GET PRICE
RFQ
41,300
One step to sell excess stocks.Or submit Qty to get quotes
Global Power Technologies Group MOSFET N-CH 600V 12A TO220 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 231W (Tc) N-Channel 600V 12A (Tc) 650 mOhm @ 6A, 10V 4V @ 250µA 39nC @ 10V 2308pF @ 25V 10V ±30V
IRFBC40LC
GET PRICE
RFQ
41,320
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 6.2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 600V 6.2A (Tc) 1.2 Ohm @ 3.7A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
IRFBC40LCPBF
Per Unit
$2.54
RFQ
39,940
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 6.2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 600V 6.2A (Tc) 1.2 Ohm @ 3.7A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±30V
Page 1 / 1