- Manufacture :
- Series :
- Packaging :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
5 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
28,900
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | |||
|
54,740
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | ||||
|
67,980
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|
Vishay Siliconix | MOSFET N-CHAN 600V | EL | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 208W (Tc) | N-Channel | - | 600V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 82nC @ 10V | 1757pF @ 100V | 10V | ±30V | ||||
|
68,720
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|
ON Semiconductor | MOSFET N-CH 600V 37A TO-220 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 357W (Tc) | N-Channel | - | 600V | 37A (Tc) | 104 mOhm @ 18.5A, 10V | 3.5V @ 250µA | 82nC @ 10V | 4165pF @ 380V | 10V | ±20V | ||||
|
26,880
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 600V TO220-3 | SuperFET® II | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 208W (Tc) | N-Channel | - | 600V | 20.6A (Tc) | 190 mOhm @ 10A, 10V | 3.5V @ 250µA | 82nC @ 10V | 3175pF @ 25V | 10V | ±20V |