- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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49,480
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 4A TO251 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 56.8W (Tc) | N-Channel | - | 600V | 4A (Tc) | 900 mOhm @ 2A, 10V | 4.1V @ 250µA | 6nC @ 10V | 263pF @ 100V | 10V | ±30V | ||||
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42,020
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 86.2W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | ||||
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75,580
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 4A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -50°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 | 104W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.3 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 640pF @ 25V | 10V | ±30V | ||||
|
33,820
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 36.8W (Tc) | N-Channel | - | 600V | 4A (Tc) | 900 mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | 315pF @ 100V | 10V | ±30V | ||||
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67,320
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|
Global Power Technologies Group | MOSFET N-CH 600V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 86.2W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | ||||
|
47,900
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|
STMicroelectronics | MOSFET N-CH 600V 4A IPAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 600V | 4A (Tc) | 2 Ohm @ 2A, 10V | 4.5V @ 50µA | 26nC @ 10V | 510pF @ 25V | 10V | ±30V |