Power Dissipation (Max) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IXFN32N60
Per Unit
$16.30
RFQ
12,700
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 32A SOT-227 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 520AW (Tc) N-Channel - 600V 32A (Tc) 250 mOhm @ 500mA, 10V 4.5V @ 8mA 325nC @ 10V 9000pF @ 25V 10V ±20V
IXTN32P60P
Per Unit
$12.02
RFQ
51,580
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET P-CH 600V 32A SOT227 PolarP™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227B 890W (Tc) P-Channel - 600V 32A (Tc) 350 mOhm @ 500mA, 10V 4V @ 1mA 196nC @ 10V 11100pF @ 25V 10V ±20V
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