Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Per Unit
$4.96
RFQ
44,800
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies HIGH POWER_NEW OptiMOS™ Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 227W (Tc) N-Channel - 600V 50A (Tc) 40 mOhm @ 24.9A, 10V 4.5V @ 1.25mA 109nC @ 10V 4354pF @ 400V 10V ±20V
IPP60R040C7XKSA1
Per Unit
$6.78
RFQ
61,860
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 50A TO220-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 227W (Tc) N-Channel - 600V 50A (Tc) 40 mOhm @ 24.9A, 10V 4V @ 1.24mA 107nC @ 10V 4340pF @ 400V 10V ±20V
IPZ60R040C7XKSA1
Per Unit
$6.64
RFQ
37,240
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 50A TO247-4 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 PG-TO247-4 227W (Tc) N-Channel - 600V 50A (Tc) 40 mOhm @ 24.9A, 10V 4V @ 1.24mA 107nC @ 10V 4340pF @ 400V 10V ±20V
IPW60R040C7XKSA1
Per Unit
$7.06
RFQ
25,500
One step to sell excess stocks.Or submit Qty to get quotes
Infineon Technologies MOSFET N-CH 600V 50A TO247-3 CoolMOS™ C7 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 227W (Tc) N-Channel - 600V 50A (Tc) 40 mOhm @ 24.9A, 10V 4V @ 1.24mA 107nC @ 10V 4340pF @ 400V 10V ±20V
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