Package / Case :
Supplier Device Package :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHP17N60D-GE3
Per Unit
$0.95
RFQ
67,880
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 17A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 277.8W (Tc) N-Channel 600V 17A (Tc) 340 mOhm @ 8A, 10V 5V @ 250µA 90nC @ 10V 1780pF @ 100V 10V ±30V
SIHP17N60D-E3
Per Unit
$0.95
RFQ
13,560
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 17A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 277.8W (Tc) N-Channel 600V 17A (Tc) 340 mOhm @ 8A, 10V 5V @ 250µA 90nC @ 10V 1780pF @ 100V 10V ±30V
SIHG17N60D-GE3
Per Unit
$1.35
RFQ
30,780
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 17A TO247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 277.8W (Tc) N-Channel 600V 17A (Tc) 340 mOhm @ 8A, 10V 5V @ 250µA 90nC @ 10V 1780pF @ 100V 10V ±30V
SIHG17N60D-E3
Per Unit
$1.35
RFQ
26,480
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 17A TO247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 277.8W (Tc) N-Channel 600V 17A (Tc) 340 mOhm @ 8A, 10V 5V @ 250µA 90nC @ 10V 1780pF @ 100V 10V ±30V
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