- Manufacture :
- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
10 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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39,240
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|
Rohm Semiconductor | MOSFET N-CH 10V DRIVE TO-3PF | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | 600V | 46A (Ta) | 81 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | 6000pF @ 25V | 10V | ±30V | ||||
|
20,440
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|
Rohm Semiconductor | MOSFET N-CH 600V 12A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 12A (Ta) | 420 mOhm @ 6A, 10V | 4.5V @ 1mA | 35nC @ 10V | 1300pF @ 25V | 10V | ±30V | ||||
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52,360
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-247 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 165W (Tc) | N-Channel | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||||
|
76,980
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|
Rohm Semiconductor | MOSFET N-CH 600V 20A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 20A (Ta) | 220 mOhm @ 10A, 10V | 4.5V @ 1mA | 65nC @ 10V | 2040pF @ 25V | 10V | ±30V | ||||
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17,060
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|
Rohm Semiconductor | MOSFET N-CH 600V 25A TO3PF | - | Not For New Designs | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 150W (Tc) | N-Channel | 600V | 25A (Tc) | 150 mOhm @ 12.5A, 10V | 4.5V @ 1mA | 88nC @ 10V | 3250pF @ 10V | 10V | ±20V | ||||
|
14,320
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|
Rohm Semiconductor | MOSFET N-CH 600V 8A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 8A (Tc) | 800 mOhm @ 4A, 10V | 4.5V @ 1mA | 21nC @ 10V | 680pF @ 25V | 10V | ±30V | ||||
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14,660
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|
Rohm Semiconductor | MOSFET N-CH 600V 6A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 1mA | 15nC @ 10V | 520pF @ 25V | 10V | ±30V | ||||
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22,960
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-220 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 600V | 20A (Ta) | 175 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | 1800pF @ 300V | 10V | ±30V | ||||
|
30,780
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|
Rohm Semiconductor | MOSFET N-CH 600V 15A TO-220FM | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 15A (Ta) | 300 mOhm @ 7.5A, 10V | 4.5V @ 1mA | 50nC @ 10V | 1700pF @ 25V | 10V | ±30V | ||||
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65,880
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|
Rohm Semiconductor | MOSFET N-CH 600V 46A TO247 | - | Not For New Designs | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 120W (Tc) | N-Channel | 600V | 46A (Tc) | 90 mOhm @ 23A, 10V | 4.5V @ 1mA | 150nC @ 10V | 6000pF @ 25V | 10V | ±30V |