4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM10NC60CF C0G
Per Unit
$0.69
RFQ
20,220
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CH 600V 10A ITO220S - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack ITO-220S 45W (Tc) N-Channel - 600V 10A (Tc) 750 mOhm @ 2.5A, 10V 4.5V @ 250µA 33nC @ 10V 1652pF @ 50V 10V ±30V
STW27N60M2-EP
Per Unit
$3.14
RFQ
73,280
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STF27N60M2-EP
Per Unit
$1.77
RFQ
26,640
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 20A TO-220FP MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
STP27N60M2-EP
Per Unit
$3.02
RFQ
14,380
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 20A TO-220 MDmesh™ M2-EP Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 170W (Tc) N-Channel - 600V 20A (Tc) 163 mOhm @ 10A, 10V 4.75V @ 250µA 33nC @ 10V 1320pF @ 100V 10V ±25V
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