Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STP11NM60A
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RFQ
35,260
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STMicroelectronics MOSFET N-CH 600V 11A TO-220 MDmesh™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 110W (Tc) N-Channel 600V 11A (Tc) 450 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1211pF @ 25V 10V ±30V
IRFB9N60A
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RFQ
35,780
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Vishay Siliconix MOSFET N-CH 600V 9.2A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
IRFB9N60APBF
Per Unit
$1.61
RFQ
52,500
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Vishay Siliconix MOSFET N-CH 600V 9.2A TO-220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 170W (Tc) N-Channel 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
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