Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
R6025FNZ1C9
Per Unit
$3.65
RFQ
70,120
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 25A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 150W (Tc) N-Channel 600V 25A (Tc) 180 mOhm @ 12.5A, 10V 5V @ 1mA 85nC @ 10V 3500pF @ 25V 10V ±30V
R6030ENZ1C9
Per Unit
$3.23
RFQ
76,520
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 30A TO247 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 120W (Tc) N-Channel 600V 30A (Tc) 130 mOhm @ 14.5A, 10V 4V @ 1mA 85nC @ 10V 2100pF @ 25V 10V ±20V
Page 1 / 1