5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SPP11N60CFDHKSA1
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RFQ
27,940
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Infineon Technologies MOSFET N-CH 600V 11A TO-220 CoolMOS™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 125W (Tc) N-Channel - 600V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 500µA 64nC @ 10V 1200pF @ 25V 10V ±20V
SPA11N60CFDXKSA1
Per Unit
$0.99
RFQ
75,940
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Infineon Technologies MOSFET N-CH 600V 11A TO220-3 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3 33W (Tc) N-Channel - 600V 11A (Tc) 440 mOhm @ 7A, 10V 5V @ 1.9mA 64nC @ 10V 1200pF @ 25V 10V ±20V
SIHA14N60E-E3
Per Unit
$1.36
RFQ
72,720
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Vishay Siliconix MOSFET N-CHANNEL 600V 13A TO220 E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220 Full Pack 147W (Tc) N-Channel - 600V 13A (Tc) 309 mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V 1205pF @ 100V 10V ±30V
SIHP14N60E-GE3
Per Unit
$1.36
RFQ
35,700
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Vishay Siliconix MOSFET N-CH 600V 13A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 147W (Tc) N-Channel - 600V 13A (Tc) 309 mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V 1205pF @ 100V 10V ±30V
SIHD14N60E-GE3
Per Unit
$1.32
RFQ
58,760
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Vishay Siliconix MOSFET N-CHANNEL 600V 13A DPAK E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252AA) 147W (Tc) N-Channel - 600V 13A (Tc) 309 mOhm @ 7A, 10V 4V @ 250µA 64nC @ 10V 1205pF @ 100V 10V ±30V
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