- Manufacture :
- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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41,080
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Microsemi Corporation | MOSFET N-CH 600V 23A TO247AD | POWER MOS IV® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | 360W (Tc) | N-Channel | 600V | 23A (Tc) | 300 mOhm @ 11.5A, 10V | 4V @ 1mA | 210nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
|
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16,220
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Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 280W (Tc) | N-Channel | 600V | 16A (Tc) | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | 3500pF @ 25V | 10V | ±30V | |||
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35,680
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|
Vishay Siliconix | MOSFET N-CH 600V 16A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 280W (Tc) | N-Channel | 600V | 16A (Tc) | 400 mOhm @ 9.6A, 10V | 4V @ 250µA | 120nC @ 10V | 3500pF @ 25V | 10V | ±30V |