- Packaging :
3 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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52,280
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 36.8W (Tc) | N-Channel | 600V | 4A (Tc) | 900 mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | 315pF @ 100V | 10V | ±30V | ||
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46,120
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 36.8W (Tc) | N-Channel | 600V | 4A (Tc) | 900 mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | 315pF @ 100V | 10V | ±30V | |||
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41,220
One step to sell excess stocks.Or submit Qty to get quotes
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO252 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | 36.8W (Tc) | N-Channel | 600V | 4A (Tc) | 900 mOhm @ 1.2A, 10V | 4V @ 250µA | 9.6nC @ 10V | 315pF @ 100V | 10V | ±30V |
