3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM1NB60SCT A3G
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RFQ
63,140
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CH 600V 500MA TO92 - Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) TO-92 2.5W (Tc) N-Channel 600V 500mA (Tc) 10 Ohm @ 250mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
TSM1NB60CP ROG
Per Unit
$0.41
RFQ
29,100
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 1A TO252 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252, (D-Pak) 39W (Tc) N-Channel 600V 1A (Tc) 10 Ohm @ 500mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
TSM1NB60CW RPG
Per Unit
$0.34
RFQ
36,900
One step to sell excess stocks.Or submit Qty to get quotes
Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 1A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 39W (Tc) N-Channel 600V 1A (Tc) 10 Ohm @ 500mA, 10V 4.5V @ 250µA 6.1nC @ 10V 138pF @ 25V 10V ±30V
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