Supplier Device Package :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STU10NM60N
Per Unit
$0.70
RFQ
21,520
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 10A IPAK MDmesh™ II Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 70W (Tc) N-Channel 600V 10A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 19nC @ 10V 540pF @ 50V 10V ±25V
NDD60N550U1-35G
Per Unit
$0.60
RFQ
77,960
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 8.2A IPAK-3 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 94W (Tc) N-Channel 600V 8.2A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 18nC @ 10V 540pF @ 50V 10V ±25V
NDD60N550U1-1G
Per Unit
$0.60
RFQ
47,280
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 8.2A IPAK-4 - Last Time Buy Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA IPAK (TO-251) 94W (Tc) N-Channel 600V 8.2A (Tc) 550 mOhm @ 4A, 10V 4V @ 250µA 18nC @ 10V 540pF @ 50V 10V ±25V
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