Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFRC20
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RFQ
39,060
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Vishay Siliconix MOSFET N-CH 600V 2A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
IRFR1N60A
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RFQ
37,800
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Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 36W (Tc) N-Channel 600V 1.4A (Tc) 7 Ohm @ 840mA, 10V 4V @ 250µA 14nC @ 10V 229pF @ 25V 10V ±30V
IRFR1N60APBF
Per Unit
$0.89
RFQ
74,040
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Vishay Siliconix MOSFET N-CH 600V 1.4A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 36W (Tc) N-Channel 600V 1.4A (Tc) 7 Ohm @ 840mA, 10V 4V @ 250µA 14nC @ 10V 229pF @ 25V 10V ±30V
IRFRC20PBF
Per Unit
$0.59
RFQ
74,920
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 2A DPAK - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 2.5W (Ta), 42W (Tc) N-Channel 600V 2A (Tc) 4.4 Ohm @ 1.2A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
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