4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFBC20LPBF
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RFQ
46,800
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Vishay Siliconix MOSFET N-CH 600V 2.2A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.1W (Ta), 50W (Tc) N-Channel 600V 2.2A (Tc) 4.4 Ohm @ 1.3A, 10V 4V @ 250µA 18nC @ 10V 350pF @ 25V 10V ±20V
IRFBC40LPBF
Per Unit
$1.28
RFQ
45,060
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Vishay Siliconix MOSFET N-CH 600V 6.2A TO-262 - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.1W (Ta), 130W (Tc) N-Channel 600V 6.2A (Tc) 1.2 Ohm @ 3.7A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 10V ±20V
IRFBC30LPBF
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RFQ
42,060
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Vishay Siliconix MOSFET N-CH 600V 3.6A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 3.1W (Ta), 74W (Tc) N-Channel 600V 3.6A (Tc) 2.2 Ohm @ 2.2A, 10V 4V @ 250µA 31nC @ 10V 660pF @ 25V 10V ±20V
IRFSL9N60A
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RFQ
36,520
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Vishay Siliconix MOSFET N-CH 600V 9.2A TO-262 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 170W (Tc) N-Channel 600V 9.2A (Tc) 750 mOhm @ 5.5A, 10V 4V @ 250µA 49nC @ 10V 1400pF @ 25V 10V ±30V
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