- Manufacture :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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76,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Microsemi Corporation | MOSFET N-CH 600V 56A TO-264 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1040W (Tc) | N-Channel | - | 600V | 60A (Tc) | 130 mOhm @ 28A, 10V | 5V @ 2.5mA | 280nC @ 10V | 11300pF @ 25V | 10V | ±30V | |||
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43,280
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 600V 90A TO-264 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1100W (Tc) | N-Channel | - | 600V | 90A (Tc) | 38 mOhm @ 45A, 10V | 4.5V @ 8mA | 210nC @ 10V | 8500pF @ 25V | 10V | ±30V |
