Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFP21N60L
GET PRICE
RFQ
68,240
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 21A TO-247AC - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 330W (Tc) N-Channel 600V 21A (Tc) 320 mOhm @ 13A, 10V 5V @ 250µA 150nC @ 10V 4000pF @ 25V 10V ±30V
STW48NM60N
Per Unit
$7.40
RFQ
13,260
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STMicroelectronics MOSFET N-CH 600V 39A TO-247 MDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247 330W (Tc) N-Channel 600V 44A (Tc) 70 mOhm @ 20A, 10V 4V @ 250µA 124nC @ 10V 4285pF @ 50V 10V ±25V
IRFP21N60LPBF
Per Unit
$4.25
RFQ
50,340
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 21A TO-247AC - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 330W (Tc) N-Channel 600V 21A (Tc) 320 mOhm @ 13A, 10V 5V @ 250µA 150nC @ 10V 4000pF @ 25V 10V ±30V
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