5 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
NDF03N60ZG
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RFQ
12,240
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ON Semiconductor MOSFET N-CH 600V 3.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 27W (Tc) N-Channel - 600V 3.1A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 18nC @ 10V 372pF @ 25V 10V ±30V
NDF03N60ZH
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RFQ
33,200
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ON Semiconductor MOSFET N-CH 600V 3.1A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 27W (Tc) N-Channel - 600V 3.1A (Tc) 3.6 Ohm @ 1.2A, 10V 4.5V @ 50µA 18nC @ 10V 372pF @ 25V 10V ±30V
IPA60R800CEXKSA1
Per Unit
$0.27
RFQ
47,360
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Infineon Technologies MOSFET N-CH 600V TO-220-3 CoolMOS™ CE Last Time Buy Tube MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 27W (Tc) N-Channel - 600V 5.6A (Tc) 800 mOhm @ 2A, 10V 3.5V @ 170µA 17.2nC @ 10V 373pF @ 100V 10V ±20V
IPA60R750E6XKSA1
Per Unit
$0.75
RFQ
17,960
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Infineon Technologies MOSFET N-CH 600V 5.7A TO220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO-220-FP 27W (Tc) N-Channel - 600V 5.7A (Tc) 750 mOhm @ 2A, 10V 3.5V @ 170µA 17.2nC @ 10V 373pF @ 100V 10V ±20V
STU1HN60K3
Per Unit
$0.60
RFQ
16,380
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STMicroelectronics MOSFET N-CH 600V 1.2A IPAK SuperMESH3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA I-PAK 27W (Tc) N-Channel - 600V 1.2A (Tc) 8 Ohm @ 600mA, 10V 4.5V @ 50µA 9.5nC @ 10V 140pF @ 50V 10V ±30V
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