Supplier Device Package :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
TSM2NB60CH C5G
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RFQ
43,020
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Taiwan Semiconductor Corporation MOSFET N-CHANNEL 600V 2A TO251 - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (IPAK) 44W (Tc) N-Channel - 600V 2A (Tc) 4.4 Ohm @ 1A, 10V 4.5V @ 250µA 9.4nC @ 10V 249pF @ 25V 10V ±30V
FQPF6N60
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RFQ
61,380
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ON Semiconductor MOSFET N-CH 600V 3.6A TO-220F QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 44W (Tc) N-Channel - 600V 3.6A (Tc) 1.5 Ohm @ 1.8A, 10V 5V @ 250µA 25nC @ 10V 1000pF @ 25V 10V ±30V
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