- Series :
- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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16,640
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|
STMicroelectronics | MOSFET N-CH 600V 27A TO-247 | SuperMESH™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 350W (Tc) | N-Channel | 600V | 27A (Tc) | 185 mOhm @ 13.5A, 10V | 4.5V @ 150µA | 264nC @ 10V | 6350pF @ 25V | 10V | ±30V | |||
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35,500
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|
Vishay Siliconix | MOSFET N-CH 600V 27A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 500W (Tc) | N-Channel | 600V | 27A (Tc) | 220 mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | 4660pF @ 25V | 10V | ±30V | ||||
|
28,580
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 27A TO247 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 357W (Tc) | N-Channel | 600V | 27A (Tc) | 160 mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | 1294pF @ 100V | 10V | ±30V | ||||
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71,840
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 27A TO220F | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 50W (Tc) | N-Channel | 600V | 27A (Tc) | 160 mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | 1294pF @ 100V | 10V | ±30V | ||||
|
58,500
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 27A TO220 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 357W (Tc) | N-Channel | 600V | 27A (Tc) | 160 mOhm @ 13.5A, 10V | 4V @ 250µA | 26nC @ 10V | 1294pF @ 100V | 10V | ±30V | ||||
|
54,920
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|
Vishay Siliconix | MOSFET N-CH 600V 27A TO-247AC | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 500W (Tc) | N-Channel | 600V | 27A (Tc) | 220 mOhm @ 16A, 10V | 5V @ 250µA | 180nC @ 10V | 4660pF @ 25V | 10V | ±30V |