Transistors - FETs, MOSFETs - Single - EGchip

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8 products

IMAGE	PART NO.	PRICE (reference only)	QUANTITY		STOCK	Mfr.	DESCRIPTION	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
	TK20N60W,S1VF	Per Unit $2.71		PDF RFQ	63,760 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	165W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	TK20E60W,S1VX	Per Unit $2.27		PDF RFQ	35,920 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	165W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	TK20C60W,S1VQ	Per Unit $3.03		PDF RFQ	16,140 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A I2PAK	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	165W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	TK20A60U(Q,M)	Per Unit $3.32		PDF RFQ	52,980 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220SIS	DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	20A (Ta)	190 mOhm @ 10A, 10V	5V @ 1mA	27nC @ 10V	1470pF @ 10V	10V	±30V
	TK20J60U(F)	Per Unit $3.14		PDF RFQ	34,400 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-3PN	DTMOSII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P(N)	190W (Tc)	N-Channel	-	600V	20A (Ta)	190 mOhm @ 10A, 10V	5V @ 1mA	27nC @ 10V	1470pF @ 10V	10V	±30V
	TK20A60W,S5VX	Per Unit $2.82		PDF RFQ	21,040 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO220SIS	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	20A (Ta)	155 mOhm @ 10A, 10V	3.7V @ 1mA	48nC @ 10V	1680pF @ 300V	10V	±30V
	TK20N60W5,S1VF	Per Unit $2.06		PDF RFQ	52,360 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-247	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-247-3	TO-247	165W (Tc)	N-Channel	-	600V	20A (Ta)	175 mOhm @ 10A, 10V	4.5V @ 1mA	55nC @ 10V	1800pF @ 300V	10V	±30V
	TK20A60W5,S5VX	Per Unit $1.92		PDF RFQ	22,960 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 20A TO-220	DTMOSIV	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	45W (Tc)	N-Channel	-	600V	20A (Ta)	175 mOhm @ 10A, 10V	4.5V @ 1mA	55nC @ 10V	1800pF @ 300V	10V	±30V

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