- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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74,500
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Microsemi Corporation | MOSFET N-CH 600V 65A TO-264MAX | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 264 MAX™ [L2] | 833W (Tc) | N-Channel | - | 600V | 65A (Tc) | 80 mOhm @ 32.5A, 10V | 4V @ 5mA | 590nC @ 10V | 13300pF @ 25V | 10V | ±30V | |||
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29,520
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|
STMicroelectronics | MOSFET N-CH 600V 65A TO-247 | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 65A (Tc) | 49 mOhm @ 32.5A, 10V | 4V @ 250µA | 174nC @ 10V | 5800pF @ 100V | 10V | ±25V |