- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
61,980
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 50W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | 10V | ±30V | ||
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42,020
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 (IPAK) | 86.2W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V | |||
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69,840
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|
Diodes Incorporated | MOSFET NCH 600V 3A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 41W (Tc) | N-Channel | 600V | 3A (Tc) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | 532pF @ 25V | 10V | ±30V | |||
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73,040
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A TO251 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TO-251 (IPAK) | 50W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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22,960
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|
Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 600V 4A ITO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 50W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.5nC @ 10V | 500pF @ 25V | 10V | ±30V | |||
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12,580
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|
Diodes Incorporated | MOSFET NCH 600V 4.5A TO220 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 113W (Ta) | N-Channel | 600V | 4.5A (Ta) | 2.5 Ohm @ 2A, 10V | 4.5V @ 250µA | 14.3nC @ 10V | 532pF @ 25V | 10V | ±30V | |||
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67,320
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|
Global Power Technologies Group | MOSFET N-CH 600V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 86.2W (Tc) | N-Channel | 600V | 4A (Tc) | 2.5 Ohm @ 2A, 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | 10V | ±30V |
