- Series :
- Part Status :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
7 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
26,040
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|
STMicroelectronics | MOSFET N-CH 600V 6A TO-220 | PowerMESH™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4V @ 250µA | 45.5nC @ 10V | 1020pF @ 25V | 10V | ±30V | ||
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56,320
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|
STMicroelectronics | MOSFET N-CH 600V 6A I2PAK | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 110W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | 10V | 30V | |||
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GET PRICE |
30,160
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|
ON Semiconductor | MOSFET N-CH 600V 7.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 600V | 7.1A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 47nC @ 10V | 1107pF @ 25V | 10V | ±30V | ||
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GET PRICE |
47,680
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|
ON Semiconductor | MOSFET N-CH 600V 7.1A TO-220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 600V | 7.1A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 47nC @ 10V | 1107pF @ 25V | 10V | ±30V | ||
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17,500
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|
STMicroelectronics | MOSFET N-CH 600V 6A TO-220 | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 110W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | 10V | ±30V | |||
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16,280
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|
STMicroelectronics | MOSFET N-CH 600V 6A TO-220FP | SuperMESH™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 30W (Tc) | N-Channel | - | 600V | 6A (Tc) | 1.2 Ohm @ 3A, 10V | 4.5V @ 100µA | 46nC @ 10V | 905pF @ 25V | 10V | ±30V | |||
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26,740
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|
Toshiba Semiconductor and Storage | PB-F POWER MOSFET TRANSISTOR TO- | U-MOSIX | Active | Tube | MOSFET (Metal Oxide) | 150°C | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.2 Ohm @ 3A, 10V | 4V @ 630µA | 21nC @ 10V | 740pF @ 300V | 10V | ±30V |
