Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
IRFIBC40G
Per Unit
$2.58
RFQ
19,860
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 3.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 10V ±20V
IRFIBC40GLC
GET PRICE
RFQ
43,000
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Vishay Siliconix MOSFET N-CH 600V 3.5A TO220FP - Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V
IRFIBC40GLCPBF
Per Unit
$1.31
RFQ
68,960
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 3.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 39nC @ 10V 1100pF @ 25V 10V ±20V
IRFIBC40GPBF
Per Unit
$2.18
RFQ
22,400
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 3.5A TO220FP - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack, Isolated Tab TO-220-3 40W (Tc) N-Channel 600V 3.5A (Tc) 1.2 Ohm @ 2.1A, 10V 4V @ 250µA 60nC @ 10V 1300pF @ 25V 10V ±20V
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