Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STF18NM60ND
Per Unit
$0.80
RFQ
43,360
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 13A TO-220FP FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 10V ±25V
R6015ENZC8
Per Unit
$2.49
RFQ
51,280
One step to sell excess stocks.Or submit Qty to get quotes
Rohm Semiconductor MOSFET N-CH 600V 15A TO3PF - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 120W (Tc) N-Channel - 600V 15A (Tc) 290 mOhm @ 6.5A, 10V 4V @ 1mA 40nC @ 10V 910pF @ 25V 10V ±20V
STW18NM60ND
Per Unit
$3.38
RFQ
45,860
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 13A TO-247 FDmesh™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 TO-247 110W (Tc) N-Channel - 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 10V ±25V
STP18NM60ND
Per Unit
$2.86
RFQ
22,260
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 13A TO-220 FDmesh™ II Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 110W (Tc) N-Channel - 600V 13A (Tc) 290 mOhm @ 6.5A, 10V 5V @ 250µA 34nC @ 10V 1030pF @ 50V 10V ±25V
Page 1 / 1