- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
2 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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50,600
One step to sell excess stocks.Or submit Qty to get quotes
|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 7A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 44.6W (Tc) | N-Channel | - | 600V | 7A (Tc) | 1.2 Ohm @ 2A, 10V | 4.5V @ 250µA | 24nC @ 10V | 1169pF @ 50V | 10V | ±30V | |||
|
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31,700
One step to sell excess stocks.Or submit Qty to get quotes
|
ON Semiconductor | MOSFET N-CH 600V 3.9A TO-220 | SuperFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 50W (Tc) | N-Channel | - | 600V | 3.9A (Tc) | 1.2 Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | 540pF @ 25V | 10V | ±30V |
