Supplier Device Package :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
FDPF7N60NZT
Per Unit
$0.89
RFQ
61,000
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
FDP7N60NZ
Per Unit
$0.42
RFQ
38,140
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220 UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 147W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
FDPF7N60NZ
Per Unit
$0.68
RFQ
20,840
One step to sell excess stocks.Or submit Qty to get quotes
ON Semiconductor MOSFET N-CH 600V 6.5A TO-220F UniFET-II™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 33W (Tc) N-Channel - 600V 6.5A (Tc) 1.25 Ohm @ 3.25A, 10V 5V @ 250µA 17nC @ 10V 730pF @ 25V 10V ±30V
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