- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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32,220
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Infineon Technologies | MOSFET N-CH 600V TO-251-3 | CoolMOS™ CE | Discontinued at Digi-Key | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251 | 28W (Tc) | N-Channel | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | |||
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30,020
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|
Infineon Technologies | MOSFET N-CH 600V 3.1A TO-251-3 | CoolMOS™ CE | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Surface Mount | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251 | 49W (Tc) | N-Channel | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | 10V | ±20V | ||||
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40,980
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 600V TO-251-3 | CoolMOS™ CE | Last Time Buy | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | - | N-Channel | 600V | 3.1A (Tc) | 1.5 Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | 200pF @ 100V | - | - |