Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
STE70NM60
Per Unit
$18.27
RFQ
15,200
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 70A ISOTOP MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Chassis Mount ISOTOP ISOTOP® 600W (Tc) N-Channel - 600V 70A (Tc) 55 mOhm @ 30A, 10V 5V @ 250µA 266nC @ 10V 7300pF @ 25V 10V ±30V
IXFQ60N60X
Per Unit
$5.56
RFQ
45,800
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 60A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V
IXFH60N60X
Per Unit
$5.54
RFQ
35,480
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 60A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 890W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 4.5V @ 8mA 143nC @ 10V 5800pF @ 25V 10V ±30V
STY60NM60
Per Unit
$7.19
RFQ
26,700
One step to sell excess stocks.Or submit Qty to get quotes
STMicroelectronics MOSFET N-CH 600V 60A MAX247 MDmesh™ Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-247-3 MAX247™ 560W (Tc) N-Channel - 600V 60A (Tc) 55 mOhm @ 30A, 10V 5V @ 250µA 266nC @ 10V 7300pF @ 25V 10V ±30V
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