- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
2 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GET PRICE |
17,720
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Renesas Electronics America | MOSFET N-CH 600V 30A TO3PFM | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3PFM, SC-93-3 | TO-3PFM | 60W (Tc) | N-Channel | 600V | 30A (Ta) | 235 mOhm @ 15A, 10V | 92nC @ 10V | 4100pF @ 25V | 10V | ±30V | |||
|
GET PRICE |
19,380
One step to sell excess stocks.Or submit Qty to get quotes
|
Renesas Electronics America | MOSFET N-CH 600V 30A TO3P | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 200W (Tc) | N-Channel | 600V | 30A (Ta) | 235 mOhm @ 15A, 10V | 92nC @ 10V | 4100pF @ 25V | 10V | ±30V |