- Manufacture :
- Operating Temperature :
- Package / Case :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
3 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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63,140
One step to sell excess stocks.Or submit Qty to get quotes
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IXYS | MOSFET N-CH 600V 47A I4-PAC-5 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | - | N-Channel | - | 600V | 47A (Tc) | 45 mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | 10V | ±20V | |||
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51,580
One step to sell excess stocks.Or submit Qty to get quotes
|
IXYS | MOSFET N-CH 600V 47A I4-PAC-5 | CoolMOS™, HiPerDyn™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | i4-Pac™-5 | ISOPLUS i4-PAC™ | - | N-Channel | - | 600V | 47A (Tc) | 45 mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | 10V | ±20V | |||
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40,120
One step to sell excess stocks.Or submit Qty to get quotes
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Infineon Technologies | MOSFET N-CH 650V 60A TO-247 | Automotive, AEC-Q101, CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 431W (Tc) | N-Channel | - | 600V | 60A (Tc) | 45 mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | 6800pF @ 100V | 10V | ±20V |