Transistors - FETs, MOSFETs - Single - EGchip

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6 products

IMAGE	PART NO.	PRICE (reference only)	QUANTITY		STOCK	Mfr.	DESCRIPTION	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
	TK4A60DB(STA4,Q,M)		GET PRICE	PDF RFQ	58,480 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.7A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	3.7A (Ta)	2 Ohm @ 1.9A, 10V	4.4V @ 1mA	11nC @ 10V	540pF @ 25V	10V	±30V
	TK4A60DA(STA4,Q,M)		GET PRICE	PDF RFQ	37,740 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 3.5A TO220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	-	N-Channel	-	600V	3.5A (Ta)	2.2 Ohm @ 1.8A, 10V	4.4V @ 1mA	11nC @ 10V	490pF @ 25V	10V	±30V
	TK3A60DA(STA4,Q,M)	Per Unit $0.56		PDF RFQ	12,420 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2.5A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	2.5A (Ta)	2.8 Ohm @ 1.3A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK4A60D(STA4,Q,M)		GET PRICE	PDF RFQ	67,120 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 4A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	4A (Ta)	1.7 Ohm @ 2A, 10V	4.4V @ 1mA	12nC @ 10V	600pF @ 25V	10V	±30V
	TK3A60DA(Q,M)		GET PRICE	PDF RFQ	42,580 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 2.5A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	600V	2.5A (Ta)	2.8 Ohm @ 1.3A, 10V	4.4V @ 1mA	9nC @ 10V	380pF @ 25V	10V	±30V
	TK5A60D(STA4,Q,M)	Per Unit $0.72		PDF RFQ	57,580 One step to sell excess stocks.Or submit Qty to get quotes	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 5A TO-220SIS	π-MOSVII	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	35W (Tc)	N-Channel	-	600V	5A (Ta)	1.43 Ohm @ 2.5A, 10V	4.4V @ 1mA	16nC @ 10V	700pF @ 25V	10V	±30V

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