- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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73,860
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|
Infineon Technologies | MOSFET N-CH 600V 3.2A TO-220AB | CoolMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO220-3-1 | 38W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | 420pF @ 25V | 10V | ±20V | ||
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33,180
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|
ON Semiconductor | MOSFET N-CH 600V 4.6A I-PAK | SuperFET™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 54W (Tc) | N-Channel | - | 600V | 4.6A (Tc) | 950 mOhm @ 2.3A, 10V | 5V @ 250µA | 16nC @ 10V | 600pF @ 25V | 10V | ±30V | |||
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GET PRICE |
44,560
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|
ON Semiconductor | MOSFET N-CH 600V 2.4A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 24W (Tc) | N-Channel | - | 600V | 2.4A (Tc) | 4.8 Ohm @ 1A, 10V | 4.5V @ 50µA | 16nC @ 10V | 325pF @ 25V | 10V | ±30V | ||
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30,820
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|
Infineon Technologies | MOSFET N-CH 600V 3.2A TO-251 | CoolMOS™ | Last Time Buy | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | PG-TO251-3 | 38W (Tc) | N-Channel | - | 600V | 3.2A (Tc) | 1.4 Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | 420pF @ 25V | 10V | ±20V | |||
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64,060
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|
STMicroelectronics | MOSFET N-CH 600V 9A IPAK | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 85W (Tc) | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | |||
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22,820
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|
STMicroelectronics | MOSFET N-CH 600V 9A TO-220AB | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 85W (Tc) | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | |||
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14,800
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|
STMicroelectronics | MOSFET N-CH 600V 9A TO-220FP | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 25W (Tc) | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | |||
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57,580
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 5A TO-220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 5A (Ta) | 1.43 Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | 700pF @ 25V | 10V | ±30V | |||
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68,680
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 7A (Ta) | 650 mOhm @ 3.5A, 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | 10V | ±30V | |||
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55,480
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|
STMicroelectronics | MOSFET N-CH 600V 9A I2PAK-FP | MDmesh™ M2 | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Full Pack, I²Pak | I2PAKFP (TO-281) | 25W (Tc) | N-Channel | - | 600V | 9A (Tc) | 450 mOhm @ 4.5A, 10V | 4V @ 250µA | 16nC @ 10V | 538pF @ 100V | 10V | ±25V | |||
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15,600
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|
Taiwan Semiconductor Corporation | MOSFET N-CH 600V 8A ITO220S | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | ITO-220S | 41.7W (Tc) | N-Channel | - | 600V | 8A (Tc) | 600 mOhm @ 1.7A, 10V | 4V @ 250µA | 16nC @ 10V | 528pF @ 100V | 10V | ±30V | |||
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13,240
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 40W (Tc) | N-Channel | - | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | 10V | ±30V |
