- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
12 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
19,060
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 38W (Tc) | N-Channel | - | 600V | 7A (Tc) | 1.1 Ohm @ 3.5A, 10V | 5V @ 250µA | 25nC @ 10V | 965pF @ 100V | 10V | ±30V | ||
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GET PRICE |
61,380
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|
ON Semiconductor | MOSFET N-CH 600V 3.6A TO-220F | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 44W (Tc) | N-Channel | - | 600V | 3.6A (Tc) | 1.5 Ohm @ 1.8A, 10V | 5V @ 250µA | 25nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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GET PRICE |
43,260
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|
ON Semiconductor | MOSFET N-CH 600V 6.2A TO-220 | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 130W (Tc) | N-Channel | - | 600V | 6.2A (Tc) | 1.5 Ohm @ 3.1A, 10V | 5V @ 250µA | 25nC @ 10V | 1000pF @ 25V | 10V | ±30V | ||
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43,300
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|
Infineon Technologies | MOSFET N-CH 600V 4.5A TO-220 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 50W (Tc) | N-Channel | - | 600V | 4.5A (Tc) | 950 mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | 490pF @ 25V | 10V | ±20V | |||
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65,140
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO220SIS | π-MOSVII | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | 1350pF @ 25V | 10V | ±30V | |||
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71,400
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|
IXYS | MOSFET N-CH 600V 14A TO-247 | HiPerFET™, Polar3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247AD (IXFH) | 327W (Tc) | N-Channel | - | 600V | 14A (Tc) | 540 mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | 1480pF @ 25V | 10V | ±30V | |||
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69,180
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO220F | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 39W (Tc) | N-Channel | - | 600V | 7A (Tc) | 1.45 Ohm @ 3.5A, 10V | 4.2V @ 250µA | 25nC @ 10V | 995pF @ 25V | 10V | ±30V | |||
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47,020
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 11.5A TO220SIS | DTMOSV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 600V | 11.5A (Tc) | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | 730pF @ 300V | 10V | ±30V | |||
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44,200
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|
Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO-220F | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220-3F | 29W (Tc) | N-Channel | - | 600V | 7A (Tc) | 1.1 Ohm @ 3.5A, 10V | 5V @ 250µA | 25nC @ 10V | 965pF @ 100V | 10V | ±30V | |||
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59,500
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|
IXYS | MOSFET N-CH 600V 14A TO-263AA | HiPerFET™, Polar3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (IXFA) | 327W (Tc) | N-Channel | - | 600V | 14A (Tc) | 540 mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | 1480pF @ 25V | 10V | ±30V | |||
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14,380
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|
IXYS | MOSFET N-CH 600V 14A TO-220AB | HiPerFET™, Polar3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 327W (Tc) | N-Channel | - | 600V | 14A (Tc) | 540 mOhm @ 7A, 10V | 5V @ 1mA | 25nC @ 10V | 1480pF @ 25V | 10V | ±30V | |||
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43,840
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 9.7A TO-220SIS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 600V | 9.7A (Ta) | 450 mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25nC @ 10V | 720pF @ 300V | 10V | ±30V |
