- Part Status :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
9 products
IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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27,020
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|
ON Semiconductor | MOSFET N-CH 600V 7.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 36W (Tc) | N-Channel | 600V | 8.4A (Tc) | 950 mOhm @ 3.5A, 10V | 4.5V @ 100µA | 39nC @ 10V | 1140pF @ 25V | 10V | ±30V | |||
|
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12,400
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Taiwan Semiconductor Corporation | MOSFET N-CH 600V 10A ITO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220 | 50W (Tc) | N-Channel | 600V | 10A (Tc) | 750 mOhm @ 5A, 10V | 4V @ 250µA | 39nC @ 10V | 1820pF @ 25V | 10V | ±30V | |||
|
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41,300
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|
Global Power Technologies Group | MOSFET N-CH 600V 12A TO220 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 231W (Tc) | N-Channel | 600V | 12A (Tc) | 650 mOhm @ 6A, 10V | 4V @ 250µA | 39nC @ 10V | 2308pF @ 25V | 10V | ±30V | |||
|
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45,620
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Vishay Siliconix | MOSFET N-CH 600V 6.2A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
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41,320
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-220AB | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
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42,580
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V | |||
|
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43,000
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|
Vishay Siliconix | MOSFET N-CH 600V 3.5A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 600V | 3.5A (Tc) | 1.2 Ohm @ 2.1A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±20V | |||
|
68,960
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|
Vishay Siliconix | MOSFET N-CH 600V 3.5A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 40W (Tc) | N-Channel | 600V | 3.5A (Tc) | 1.2 Ohm @ 2.1A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±20V | ||||
|
39,940
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|
Vishay Siliconix | MOSFET N-CH 600V 6.2A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 6.2A (Tc) | 1.2 Ohm @ 3.7A, 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | 10V | ±30V |