Package / Case :
Power Dissipation (Max) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
4 products
IMAGE PART NO. PRICE (reference only) QUANTITY STOCK Mfr. DESCRIPTION Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
SIHP15N60E-E3
Per Unit
$1.70
RFQ
56,640
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 15A TO220AB - Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V
IXFH42N60P3
Per Unit
$3.99
RFQ
25,000
One step to sell excess stocks.Or submit Qty to get quotes
IXYS MOSFET N-CH 600V 42A TO247 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AD (IXFH) 830W (Tc) N-Channel - 600V 42A (Tc) 185 mOhm @ 500mA, 10V 5V @ 4mA 78nC @ 10V 5150pF @ 25V 10V ±30V
SIHG15N60E-GE3
Per Unit
$1.92
RFQ
29,260
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 15A TO247AC E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247AC 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V
SIHP15N60E-GE3
Per Unit
$1.70
RFQ
32,520
One step to sell excess stocks.Or submit Qty to get quotes
Vishay Siliconix MOSFET N-CH 600V 15A TO220AB E Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 180W (Tc) N-Channel - 600V 15A (Tc) 280 mOhm @ 8A, 10V 4V @ 250µA 78nC @ 10V 1350pF @ 100V 10V ±30V
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