- Series :
- Part Status :
- Operating Temperature :
- Mounting Type :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
6 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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42,320
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|
Microsemi Corporation | MOSFET N-CH 600V 23A D3PAK | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | 415W (Tc) | N-Channel | 600V | 24A (Tc) | 290 mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | 10V | ±30V | ||
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70,340
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|
Microsemi Corporation | MOSFET N-CH 600V 23A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 415W (Tc) | N-Channel | 600V | 24A (Tc) | 290 mOhm @ 11A, 10V | 5V @ 1mA | 110nC @ 10V | 4415pF @ 25V | 10V | ±30V | ||
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19,260
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 39A TO220-3 | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 50W (Tc) | N-Channel | 600V | 38.8A (Ta) | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | 4100pF @ 300V | 10V | ±30V | |||
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75,700
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|
Vishay Siliconix | MOSFET N-CH 600V 8.9A TO-247AC | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 170W (Tc) | N-Channel | 600V | 8.9A (Tc) | 820 mOhm @ 5.3A, 10V | 4V @ 250µA | 110nC @ 10V | 1800pF @ 25V | 10V | ±20V | ||
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61,640
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|
Rohm Semiconductor | MOSFET N-CH 600V 35A TO3PF | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3 Full Pack | TO-3PF | 120W (Tc) | N-Channel | 600V | 35A (Tc) | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | 2720pF @ 25V | 10V | ±20V | |||
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26,540
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|
Rohm Semiconductor | MOSFET N-CH 600V 35A TO247 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 120W (Tc) | N-Channel | 600V | 35A (Tc) | 102 mOhm @ 18.1A, 10V | 4V @ 1mA | 110nC @ 10V | 2720pF @ 25V | 10V | ±20V |
