- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
13 products
| IMAGE | PART NO. | PRICE (reference only) | QUANTITY | STOCK | Mfr. | DESCRIPTION | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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18,220
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|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15.8A TO-220AB | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 130W (Tc) | N-Channel | - | 600V | 15.8A (Ta) | 230 mOhm @ 7.9A, 10V | 4.5V @ 790µA | 43nC @ 10V | 1350pF @ 300V | 10V | ±30V | ||
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32,200
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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51,340
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|
Infineon Technologies | MOSFET N-CH 600V 16A I2PAK | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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49,620
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|
STMicroelectronics | MOSFET N-CH 600V 24A | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 190W (Tc) | N-Channel | - | 600V | 24A (Tc) | 130 mOhm @ 12A, 10V | 5V @ 250µA | 43nC @ 10V | 1870pF @ 100V | 10V | ±25V | |||
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36,080
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|
Infineon Technologies | MOSFET N-CH 600V 16A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 139W (Tc) | N-Channel | - | 600V | 16A (Tc) | 199 mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | 1520pF @ 100V | 10V | ±20V | |||
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37,460
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO220-FP | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 32W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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26,200
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO262 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | PG-TO262-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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38,740
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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19,400
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack | PG-TO-220-FP | 32W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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53,300
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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41,780
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|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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34,140
One step to sell excess stocks.Or submit Qty to get quotes
|
Infineon Technologies | MOSFET N-CH 600V 13.8A TO220 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | PG-TO-220-3 | 104W (Tc) | N-Channel | - | 600V | 13.8A (Tc) | 280 mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | 950pF @ 100V | 10V | ±20V | |||
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39,860
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|
STMicroelectronics | MOSFET N-CH 600V 24A | MDmesh™ DM2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 190W (Tc) | N-Channel | - | 600V | 24A (Tc) | 130 mOhm @ 12A, 10V | 5V @ 250µA | 43nC @ 10V | 1870pF @ 100V | 10V | ±25V |
